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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 5V, 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 10V, 2500pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8M31HZGTB is a complementary automotive MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel pair within a single HSOP-8 package. It holds AEC-Q101 qualification for automotive reliability. The device supports a drain-source voltage of 60V with a continuous drain current of 4.5A. Typical on-resistance values are 0.055Ω at 4V gate drive and 0.046Ω at 10V gate drive. Total gate charge is typically 7nC. Power dissipation is rated at 2W, operating within a temperature range of -55°C to +150°C.
Feature Summary
- Integrated ESD protection diodes for enhanced circuit robustness
- Automotive-grade qualification compliant with AEC-Q101 standards
- Complementary N/P-channel configuration in a compact surface-mount package
Applications
- Automotive switching applications
- Low-side and high-side driver circuits
- Power management modules requiring compact complementary pairs
Procurement Notes
Verify the specific ordering suffix HZG against the official datasheet to confirm package type and tape-and-reel specifications. Ensure the component meets the required AEC-Q101 grade for your target application. Cross-reference the manufacturer's latest documentation for any potential product change notices or lifecycle status updates before finalizing procurement plans.
Selection Notes
Select this component when a verified automotive-grade complementary MOSFET pair is required in an SOP-8 footprint. The 60V rating suits standard automotive electrical systems. Consider the 4.5A current limit and 2W power dissipation capabilities during thermal design. Verify that the 7nC gate charge aligns with the driving capability of the intended control logic.
Part Context
This part belongs to ROHM's lineup of complementary power MOSFETs designed for space-constrained automotive electronics. The SP8M31 series integrates both N-channel and P-channel devices to simplify board layout and reduce component count compared to discrete solutions.
Replacement Considerations
The SP8M3HZGTB is listed as a similar level replacement with the same pinout and package. Verify electrical parameters match requirements before substitution.
