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The SP8M3FU6TB1 is a complementary power MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel configuration within a single HSOP-8 surface-mount package. The device supports a drain-source voltage of 30V with a continuous drain current rating of 5.0A. Key electrical parameters include a typical on-resistance of 0.058Ω at 4V gate drive and 0.052Ω at 4.5V. Total gate charge is typically 12.3nC for the N-channel and 38nC for the P-channel variant. The component operates within a temperature range of -55°C to +150°C and offers a power dissipation capacity of approximately 7W.
Verify the specific ordering suffix against the official ROHM datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure the selected part number matches the required pinout and thermal characteristics for the target application design.
Select this component for designs requiring a matched N/P pair in a small footprint. Evaluate the 30V breakdown voltage against circuit peak transients. Consider the 5.0A current limit and 0.058Ω on-resistance for efficiency calculations at low gate voltages. Verify that the HSOP-8 thermal performance meets the system's heat dissipation requirements under maximum load conditions.
This model belongs to ROHM's complementary power MOSFET lineup, designed to replace discrete dual-MOSFET solutions. It simplifies PCB layout by integrating both polarities into one package. The series targets cost-sensitive consumer electronics and industrial control systems where space constraints and switching efficiency are critical design factors.
The SP8M3HZG is listed as a similar level replacement with the same pinout and package. Verify functional equivalence and supply status before substitution. Other 30V complementary MOSFETs in SOP-8 packages may serve as alternatives if pin compatibility and electrical ratings align with the original design requirements.