SP8M3HZGTB

Overview

The SP8M3HZGTB is a complementary power MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel pair integrated within a single SOP-8 surface-mount package. The device operates with a drain-source voltage (Vdss) of 30 V and supports a continuous drain current (Id) of 5.0 A. Key electrical characteristics include a typical on-resistance (Rds(on)) of 0.058 Ω at Vgs = 4 V and 0.052 Ω at Vgs = 4.5 V. The total gate charge (Qg) is typically 7 nC, with a maximum power dissipation (Pd) of 2 W. The component functions in enhancement mode across a storage temperature range of -55 °C to +150 °C.

Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs into a compact SOP-8 package for space-constrained designs.
• Optimized for low drive voltage operation with specified Rds(on) performance at 4 V and 4.5 V gate-source voltages.
• Features low total gate charge to support efficient switching applications.

Applications

• General-purpose switching circuits requiring complementary logic-level control.
• Low-voltage power management systems operating within the 30 V rating.
• Compact electronic devices utilizing surface-mount assembly techniques.

Procurement Notes

Verify the supply status before design finalization, as this component may be designated as not recommended for new designs. Confirm that the ordering suffix GTB corresponds to the required tape-and-reel packaging quantity of 2500 units. Ensure compatibility with SOP-8 footprint dimensions of 6.0x5.0 mm during PCB layout planning.

Selection Notes

Select this part when a matched N/P channel pair is required in a small outline package. Verify that the 30 V breakdown voltage and 5.0 A current rating meet circuit demands. Check that the driver can provide sufficient voltage to achieve the specified low on-resistance values at 4 V or 4.5 V.

Part Context

The SP8M3HZGTB belongs to ROHM's complementary MOSFET family, sharing the SP8M3FRATB variant but distinguished by its specific tape-and-reel packaging configuration. It serves as a discrete solution for driving loads where both high-side and low-side switching capabilities are needed from a single component footprint.

Replacement Considerations

The SP8M3FRATB is documented as a similar level replacement with the same pinout and package. Verify functional equivalence regarding Rds(on) and gate charge specifications before substitution.