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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 5A/4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5A, 4.5A
- Rds On (Max) @ Id, Vgs：51mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：230pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8M3TB is a complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel enhancement-mode transistor within a single HSOP-8 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports continuous drain currents up to 5.0 A. Typical on-resistance values are specified at 58 mΩ for the N-channel and 65 mΩ for the P-channel when driven at 4.5 V. The component includes built-in gate-source protection diodes and operates reliably across a temperature range from -55°C to +150°C, with a total power dissipation rating of 2 W.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a compact SOP8 package
- Includes built-in gate-source protection diodes for enhanced reliability
- Optimized for low on-resistance to improve switching efficiency
- Automotive-grade qualification compliant with AEC-Q101 standards
Applications
- DC/DC converter circuits
- Power switching applications
- Automotive electronic control units
Procurement Notes
Verify the specific suffix TB against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with SOP8 footprint dimensions during PCB layout. Confirm RoHS compliance status through current datasheets as regulatory requirements may evolve over time.
Selection Notes
Select this component for designs requiring integrated complementary switching in limited space. Verify that the 30 V rating exceeds peak circuit voltages. Check drive voltage levels to ensure Rds(on) performance matches design expectations at 4.5 V or 10 V operation.
Part Context
This part belongs to the SP8M series of complementary MOSFETs designed for automotive and industrial applications. It shares pinout compatibility with other variants in the family, such as the SP8M3HZG, facilitating potential upgrades or replacements within existing designs without board modifications.
Replacement Considerations
The SP8M3HZGTB is an active replacement with identical pinout and package. Verify electrical parameter equivalence before substitution. Other similar-level parts require schematic review due to potential pinout differences.
