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The SP8M4FRATB is a dual MOSFET array from Rohm Semiconductor, featuring one N-channel and one P-channel device in an 8-SOP surface-mount package. It supports a drain-source voltage (Vdss) of 30V with continuous drain currents of 9A for the N-channel and 7A for the P-channel at 25°C. The component has a maximum power dissipation of 2W and an on-resistance (Rds(on)) of 0.017Ω. Gate charge (Qg) is 15nC at 5V, and input capacitance (Ciss) is specified at 25V. It operates up to a junction temperature of 150°C and holds AEC-Q101 automotive qualification.
Verify the specific manufacturer designation upon ordering, as some listings associate this part number with LAPIS Technology due to corporate acquisitions. Confirm that the received components match the ROHM Semiconductor datasheet specifications regarding pinout and electrical characteristics. Ensure the package type corresponds to the 8-SOP form factor required for the intended PCB layout.
Select this component when a synchronized N/P pair is required for synchronous rectification or half-bridge driving in automotive systems. The 30V rating suits 12V and 24V vehicle architectures. Consider the 0.017Ω Rds(on) for efficiency requirements and the 15nC gate charge for switching speed constraints relative to the controller's output capability.
This device belongs to Rohm’s automotive MOSFET array series designed for high-density power electronics. It replaces discrete N and P channel installations, reducing board space and parasitic inductance. The integration supports complex power topologies common in modern vehicle electrification and infotainment systems.
Direct substitutes must match the 30V Vdss, dual N+P configuration, and SOP8 package. Verify equivalent Rds(on) and Qg values to maintain circuit performance. Check current availability as the original part status may be restricted.