SP8M4FU6TB

Overview

The SP8M4FU6TB is a complementary power MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel pair within a single package. It offers a drain-source voltage (Vdss) of 45V for both channels. The typical on-resistance (Rds(on)) at a 10V drive is 0.023 Ohms for the N-channel and 0.027 Ohms for the P-channel. Total gate charge (Qg) is typically 12nC for the N-channel and 11nC for the P-channel. Power dissipation (Pd) is rated at 2W. The device operates within a temperature range of -55°C to 150°C and utilizes an SOP-8 surface mount package.

Feature Summary

• Complementary N-channel and P-channel configuration in a single compact package
• Low on-resistance optimized for 10V drive applications
• Surface-mount design suitable for space-constrained PCB layouts

Applications

• Motor driver circuits
• DC/DC converter output stages
• Load switch applications

Procurement Notes

Verify the specific ordering suffix against the official datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status and supply availability directly with authorized distributors or the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a matched complementary pair is required for low-voltage switching applications. Ensure the 45V breakdown voltage meets circuit requirements and that the 10V drive capability aligns with the control logic levels available in the design.

Part Context

This part belongs to ROHM's SP8M series of complementary power MOSFETs. The series is designed to provide matched performance characteristics for N and P channels, simplifying the design of bridge drivers and synchronous rectification circuits compared to using discrete individual transistors.

Replacement Considerations

The SP8M24HZG is listed as a similar level replacement with the same pinout and package. Verify electrical parameters such as Rds(on) and Vdss to ensure compatibility with the existing circuit design before substitution.