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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 9A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 7A (Ta)
- Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 5V, 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1190pF @ 10V, 2600pF @ 10V
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8M4HZGTB is an automotive-grade complementary power MOSFET featuring integrated ESD protection diodes, housed in a compact SOP-8 surface-mount package. It integrates N-channel and P-channel devices within a single component to facilitate efficient switching applications. The device carries AEC-Q101 certification for automotive reliability. Key electrical parameters include a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 9A. Typical on-resistance (R_DS(on)) values are 0.017Ω at V_GS=4V, 0.016Ω at V_GS=4.5V, and 0.012Ω at V_GS=10V. Total gate charge (Q_G) is typically 15nC, with power dissipation rated at 2W. Operating temperatures range from -55°C to 150°C.
Feature Summary
- Automotive-grade qualification compliant with AEC-Q101 standards
- Integrated complementary N+P channel configuration with built-in ESD protection
- Low on-resistance optimized for low-voltage drive conditions
Applications
- Automotive switching circuits
- General-purpose power management applications requiring low-side or high-side driving
Procurement Notes
Verify the specific ordering suffix 'TB' corresponds to the tape-and-reel packaging format containing 2500 units per reel. Confirm RoHS compliance status directly with the manufacturer's latest documentation before finalizing procurement specifications. Ensure the component meets the required storage temperature ranges during handling.
Selection Notes
Select this component when a small form factor SOP-8 package is required for complementary switching functions in automotive environments. The 30V rating and 9A current capacity suit low-voltage DC-DC converters or motor control interfaces. Verify that the driver circuit can provide the necessary gate voltage levels to achieve the specified low R_DS(on) performance.
Part Context
This part belongs to ROHM Semiconductor's lineup of complementary MOSFETs designed for space-constrained automotive electronics. It serves as a direct replacement for the SP8M10FRA, offering identical pinout compatibility while providing enhanced drain current capabilities and improved on-resistance characteristics for modern vehicle electrical systems.
Replacement Considerations
The SP8M10FRA is a confirmed substitute with the same pinout and package. Note that the SP8M10FRA is marked as not recommended for new designs, whereas the SP8M4HZGTB remains active.
