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Product Detailed Parameters
- Description：MOSFET N/P-CH 100V 3A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta), 2.5A (Ta)
- Rds On (Max) @ Id, Vgs：170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8.5nC @ 5V, 12.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：610pF @ 25V, 1550pF @ 25V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8M51HZGTB is a complementary power MOSFET manufactured by ROHM Semiconductor, designed for switch-mode power supply applications. It integrates one N-channel and one P-channel enhancement-mode transistor in an SOP-8 surface-mount package. The device supports a drain-source voltage of 100V with a continuous drain current rating of 3A. At a gate drive voltage of 4V, the typical on-resistance is 0.135 ohms, while at 10V it drops to 0.12 ohms. Total gate charge is specified at 8.5 nC, and the maximum power dissipation is 2W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Complementary N-channel and P-channel configuration for efficient half-bridge driving
- Optimized low on-resistance characteristics for 4V logic-level gate drive signals
- Automotive-grade reliability certified under AEC-Q101 standards
- Compact SOP-8 package design facilitating high-density PCB layouts
Applications
- Switch-mode power supplies (SMPS)
- DC-DC converter circuits
- Motor driver interfaces
Procurement Notes
Verify the specific ordering suffix TB against the required reel quantity of 2500 units. Confirm that the SOP-8 package dimensions match the target footprint. Ensure the procurement channel provides valid traceability documentation for automotive-grade components. Check for any recent product change notices affecting the manufacturing site or material composition before finalizing orders.
Selection Notes
Select this component when a 100V complementary pair is required for low-voltage gate drive applications. The 4V optimized on-resistance makes it suitable for systems driven by 3.3V or 5V logic controllers. Compare the 8.5 nC gate charge against switching frequency requirements to ensure adequate drive capability. Verify thermal management needs against the 2W power dissipation limit in the intended enclosure environment.
Part Context
This part belongs to the SP8M51 series of complementary MOSFETs from ROHM. It shares the same pinout and package as the SP8K31FRA but offers higher voltage ratings. The HZG suffix indicates the specific tape and reel packaging format used for automated assembly processes in high-volume manufacturing environments.
Replacement Considerations
The SH8M51GZETB is listed as a direct replacement alternative. Both parts share identical pinouts and package types. Verify electrical parameter compatibility, particularly on-resistance values, before substituting.
