SP8M7FU6TB

Overview

The SP8M7FU6TB is a MOSFET array manufactured by Rohm Semiconductor, housed in an 8-SOP surface mount package. It integrates N-channel and P-channel logic-level gate transistors within a single compact component. The device supports a drain-to-source voltage (Vdss) of 30V. Continuous drain current ratings are specified at 5A for the N-channel configuration and 7A for the P-channel configuration. The total power dissipation capability is rated at 2W. This dual-configuration design facilitates efficient circuit implementation for applications requiring complementary switching actions.

Feature Summary

• Integrates both N-channel and P-channel MOSFETs into a single surface-mount package
• Features logic-level gate architecture for direct interface with digital control signals
• Provides complementary switching functionality within a compact 8-SOP footprint

Applications

• Motor driver circuits requiring complementary high-side and low-side switching
• DC-DC converter topologies utilizing synchronous rectification
• General-purpose power switching applications in consumer electronics

Procurement Notes

Verify the specific ordering suffix to ensure the correct tape-and-reel quantity matches production requirements. Confirm that the 8-SOP package dimensions align with the target PCB layout constraints. Ensure that the 30V voltage rating and current specifications satisfy the operational demands of the intended circuit design before finalizing procurement orders.

Selection Notes

Select this component when a compact solution for complementary N/P-channel switching is required. The logic-level gate characteristic simplifies drive circuit design compared to standard threshold devices. Consider the 2W power dissipation limit and thermal management requirements for the SOP package when evaluating suitability for high-current continuous operation scenarios.

Part Context

This part belongs to Rohm's lineup of discrete MOSFET arrays designed for space-constrained applications. It serves as a building block for power management sections in portable devices and industrial controls. The integration of complementary channels reduces component count and assembly complexity compared to using separate discrete transistors.

Replacement Considerations

Public confirmed substitute part numbers include SP8M7TB and SP8M70TB1. Verify pin compatibility and electrical parameters such as Vdss and Id ratings when substituting. Ensure the alternative package type meets mechanical constraints.