SP8M8FU6TB

SP8M8FU6TB

  • Description:MOSFET N/P-CH 30V 6A/4.5A 8SOP
  • Series:-

SKU:33508884f3d2 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 6A/4.5A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6A, 4.5A
  • Rds On (Max) @ Id, Vgs:30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:10.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:520pF @ 10V
  • Power - Max:2W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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SP8M8FU6TB

Overview

The SP8M8FU6TB is a dual complementary power MOSFET array from Rohm Semiconductor, housed in an 8-pin SOP package. It integrates one N-channel and one P-channel transistor within a single component. The N-channel device supports a drain-source voltage of 30V and a continuous current of 6A, while the P-channel variant handles 4.5A at the same voltage rating. Typical on-resistance values are 0.021 ohms for the N-channel and 0.033 ohms for the P-channel at 10V drive. The unit features a power dissipation capacity of 2W and operates within a temperature range of -55°C to 150°C.

Feature Summary

  • Integrates complementary N-channel and P-channel MOSFETs in a compact surface-mount package
  • Optimized for low on-resistance to minimize conduction losses in switching applications
  • Designed for high-speed operation with fast rise and fall times

Applications

  • Motor driver circuits
  • Power switching modules
  • DC-DC converter topologies

Procurement Notes

Verify the specific ordering part number SH8M8TB1 against the SP8M8FU6TB designation when sourcing, as documentation may reference legacy or alternative identifiers. Confirm RoHS compliance status directly with the manufacturer or authorized distributor prior to procurement. Ensure that the selected supplier provides valid datasheets matching the exact package dimensions and pinout configuration to prevent integration errors during assembly.

Selection Notes

Select this component for designs requiring matched N/P channel characteristics in a small footprint. Evaluate the thermal performance carefully, as the 2W power dissipation limit requires adequate PCB copper area for heat spreading. Compare the on-resistance specifications against system voltage drops to ensure efficiency targets are met. Consider the 30V breakdown voltage relative to peak transient voltages in the target application circuit.

Part Context

This component belongs to Rohm's family of dual complementary MOSFET arrays designed for space-constrained power electronics. It serves as a discrete solution for half-bridge configurations where separate components would increase board area. The SOP-8 package facilitates automated surface-mount assembly, supporting high-volume manufacturing processes common in consumer and industrial electronics.

Replacement Considerations

The SH8MA3 is documented as a recommended replacement with the same SOP8 package. Verify electrical compatibility, specifically checking if the substitute meets the required current and resistance specifications for the existing design.

SP8M8FU6TBSP8M8FU6TB

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