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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6A/4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A, 4.5A
- Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SP8M8TB is a complementary silicon N-channel and P-channel MOSFET in an SOP8 surface-mount package. It features low on-resistance and built-in gate-source protection diodes. The N-channel device supports a drain-source voltage of 30V with a continuous current of ±6.0A, while the P-channel handles ±4.5A. Typical RDS(on) values are 21mΩ at VGS=10V for N-ch and 40mΩ at VGS=-10V for P-ch. Total power dissipation is 2W. Applications include power switching and DC/DC converters.
Feature Summary
- Complementary N-channel and P-channel configuration in a single compact SOP8 package
- Low static drain-source on-state resistance for efficient power switching
- Integrated gate-source protection diode to guard against static electricity
Applications
- Power switching circuits
- DC / DC converter modules
Procurement Notes
Verify the ordering suffix TB indicates tape-and-reel packaging with a basic unit quantity of 2500 pieces. Confirm RoHS compliance status and check for any specific handling requirements related to the ESD protection diode during assembly. Ensure the design accounts for the absolute maximum ratings provided in the datasheet.
Selection Notes
Select this component for applications requiring a matched N/P pair in a small footprint. Verify that the drive voltage aligns with the specified thresholds (e.g., 4V or 10V) to achieve the desired on-resistance. Consider the thermal resistance of 62.5°C/W when designing heat dissipation strategies for the SOP8 package.
Part Context
This part belongs to ROHM's lineup of 4V drive complementary MOSFETs designed for space-constrained power management solutions. The SOP8 package provides a balance between thermal performance and board space efficiency compared to larger through-hole alternatives.
Replacement Considerations
Check for direct pin-compatible replacements with similar VDS and ID ratings. Ensure substitute parts maintain comparable RDS(on) and gate charge characteristics to preserve switching speed and efficiency in existing designs.
