SPB04N50C3ATMA1

Single FETs, MOSFETs Overview

The SPB04N50C3ATMA1 is an N-channel power MOSFET from Infineon Technologies' CoolMOS C3 series, housed in a PG-TO263-3-2 surface-mount package. It features a drain-source voltage (Vdss) of 560 V and a continuous drain current (Id) of 4.5 A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 950 mΩ at 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 19 nC, input capacitance (Ciss) of approximately 190 pF, and a threshold voltage range of 2.1 V to 3.9 V. It supports a junction temperature up to 150°C and offers a thermal resistance (RthJC) of 2.5 K/W.

Single FETs, MOSFETs Feature Summary

• Utilizes CoolMOS C3 superjunction technology for optimized switching performance.
• Designed for high-voltage applications with robust avalanche capability.
• Surface-mount PG-TO263-3-2 package facilitates efficient thermal management.

Single FETs, MOSFETs Applications

• High-frequency switched-mode power supplies
• Industrial motor control systems
• Uninterruptible power supply (UPS) units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'ATMA1' against the manufacturer's latest datasheet to confirm active status and exact pinout configuration. Ensure compatibility with PG-TO263-3-2 footprints during PCB layout. Cross-reference ordering information directly with Infineon authorized distributors to avoid obsolete or counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 560 V blocking capability with moderate current handling. The low gate charge supports high-efficiency operation in hard-switching topologies. Evaluate thermal constraints carefully, as the 4.5 A rating depends on adequate heatsinking within the TO-263 package limits.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C3 family, representing a generation of superjunction MOSFETs designed to reduce conduction and switching losses compared to standard planar technologies. It serves as a successor to earlier CoolMOS variants, offering improved figure-of-merit metrics for medium-power industrial and consumer electronics applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include SPD04N50C3ATMA1 or other C3-series devices with matching voltage and current ratings. Verify pin compatibility and thermal characteristics before substitution.

Single FETs, MOSFETs FAQ

What is the maximum repetitive peak avalanche energy rating?

Specific avalanche energy values are defined in the official Infineon datasheet; verify against application stress conditions.

Does this device support synchronous rectification?

Yes, the fast switching characteristics and low Rds(on) make it suitable for synchronous rectifier applications in power converters.