SPB08P06P

Single FETs, MOSFETs Overview

The SPB08P06P is a P-Channel enhancement mode power MOSFET from Infineon's SIPMOS series, housed in a P-TO263-3-2 package. It features a maximum drain-source voltage of -60 V and a continuous drain current of -8.8 A at 25 °C. The device has a maximum on-state resistance of 0.3 Ω and supports a pulsed drain current of -35.3 A. Key electrical parameters include an input capacitance of 335 pF, total gate charge of 10 nC, and a thermal resistance junction-to-case of 3.6 K/W. It operates up to 175 °C and includes avalanche and dv/dt ratings.

Single FETs, MOSFETs Feature Summary

• Avalanche rated for robust energy handling
• dv/dt rated for fast switching applications
• Enhancement mode operation with standard logic drive compatibility

Single FETs, MOSFETs Applications

• High-side load switching
• Power management circuits
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against official Infineon documentation to ensure correct package variant and tape-and-reel specifications. Confirm RoHS compliance status and lead-free finishing requirements prior to procurement. Cross-reference datasheet revision numbers to validate parameter accuracy for production integration.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage high-current applications requiring high-side switching capabilities. Evaluate thermal performance based on PCB copper area and ambient temperature conditions. Ensure gate drive voltage meets the minimum threshold for optimal RDS(on) performance while respecting absolute maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS family of P-channel power transistors. These devices are designed for efficient power switching in compact surface-mount packages. The technology focuses on minimizing on-state resistance and improving switching speeds for modern power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that alternative components meet or exceed the -60 V breakdown voltage and -8.8 A current rating requirements.

Single FETs, MOSFETs FAQ

Is the SPB08P06P suitable for high-frequency switching?

Yes, it is dv/dt rated and features low gate charge (10 nC), supporting fast switching transitions.

What is the maximum operating temperature?

The device supports an operating and storage temperature range up to +175 °C.