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SPB11N60S5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 11A TO263-3. Review the specifications below when checking this part for your BOM.
The SPB11N60S5ATMA1 is a CoolMOS S5 series N-channel Power MOSFET manufactured by Infineon Technologies. It features a 600V drain-source breakdown voltage and a continuous drain current of 11A at 25°C, with a maximum pulsed current of 44A. The device utilizes D2PAK-3 (TO-263-3) surface-mount packaging. Key electrical characteristics include a typical on-resistance of 0.38 Ohms and a gate charge of 45nC. It operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific suffix ATMA1 against official datasheets to confirm tape-and-reel packaging details. Confirm RoHS compliance status through manufacturer documentation. Check for end-of-life or not-recommended-for-new-designations prior to procurement planning.
Select this component for designs requiring 600V blocking capability with moderate current handling. Evaluate thermal management requirements based on the specified power dissipation limits in the TO-263 package. Ensure gate drive voltages remain within the +/- 20V absolute maximum ratings.
This part belongs to Infineon's CoolMOS S5 family, designed for general-purpose high-voltage switching. It serves as an alternative to legacy silicon MOSFETs in medium-power applications. The D2PAK package facilitates automated surface-mount assembly.
Consult official substitution guides for compatible CoolMOS variants. Verify pinout compatibility and thermal resistance parameters when considering cross-brand alternatives.
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