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SPB20N60C3ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 20.7A TO263-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SPB20N60C3ATMA1
- Description：MOSFET N-CH 600V 20.7A TO263-3
- Series：CoolMOS™ C3
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 13.1A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for SPB20N60C3ATMA1
Single FETs, MOSFETs Overview
The SPB20N60C3 is an N-channel enhancement mode power MOSFET from the CoolMOS C3 series, manufactured by Infineon Technologies. It features a maximum drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 20.7 A at 25°C. The device has a typical on-state resistance (Rds(on)) of 190 mΩ at Vgs = 10 V. Total gate charge (Qg) is typically 87 nC. Power dissipation reaches 208 W at 25°C case temperature. Operating and storage temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes revolutionary high-voltage technology for optimized performance
- Features ultra-low gate charge characteristics
- Rated for periodic avalanche energy operation
Single FETs, MOSFETs Applications
- High-frequency power switching circuits
- DC-DC converters
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or product selection guide. Ensure the component meets all environmental standards required for the intended application before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high breakdown voltage and low conduction losses in medium-power applications. Evaluate thermal management requirements based on the 208 W power dissipation rating at 25°C case temperature. Consider the periodic avalanche rating if inductive load switching with potential overvoltage events is expected in the circuit design.
Single FETs, MOSFETs Part Context
This part belongs to the CoolMOS C3 family, representing advanced high-voltage silicon technology. It serves as a surface-mount alternative to through-hole variants like the SPP20N60C3, utilizing the PG-TO263-3 package. The C3 generation focuses on reducing gate charge while maintaining low on-resistance for improved efficiency in hard-switching applications.
Single FETs, MOSFETs Replacement Considerations
Direct pin-compatible replacements within the same package may include other CoolMOS C3 devices with similar voltage and current ratings. Verify electrical parameters such as Rds(on) and Qg when substituting with newer generations like C6 or C7, as switching characteristics may differ significantly.
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