SPB80N06S2L-05

Single FETs, MOSFETs Overview

The SPB80N06S2L-05 is an N-channel enhancement mode OptiMOS power transistor designed for high-efficiency switching applications. It features a maximum drain-source voltage of 55 V and a continuous drain current of 80 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 4.5 mΩ in the SMD version, ensuring low conduction losses. It supports a pulsed drain current of 320 A and offers a single-pulse avalanche energy rating of 800 mJ. The component operates within a junction temperature range of -55°C to +175°C and utilizes a PG-TO263-3-2 package.

Single FETs, MOSFETs Feature Summary

• Logic level gate drive capability for direct control from standard logic interfaces
• Avalanche rated performance with dv/dt rating for robust operation in inductive loads
• Optimized thermal characteristics with low junction-to-case thermal resistance

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power factor correction (PFC) stages
• High-side and low-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67040-S4256 against the required package variant. Confirm that the SMD version specifications align with the PCB footprint requirements. Ensure the design accounts for the specified thermal resistance values under actual operating conditions. Check for any updates regarding the product status or recommended replacements.

Single FETs, MOSFETs Selection Notes

Select this component when a 55 V N-channel MOSFET with high current handling is required. The low RDS(on) makes it suitable for efficiency-critical designs. Consider the PG-TO263-3-2 package constraints for thermal management. Evaluate the gate charge parameters against the available driver capabilities to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS technology family, which focuses on reducing power losses through advanced trench gate structures. The SPB80N06S2L-05 represents a specific iteration optimized for surface-mount assembly. It shares core electrical characteristics with other variants in the 80N06 series but differs in packaging and specific thermal ratings.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include SPI80N06S2L-05 for leaded TO-262 packages and SPP80N06S2L-05 for through-hole TO-220 packages. Verify pinout compatibility and thermal dissipation capabilities before substitution.