SPP10N10L

$0.52

Description：MOSFET N-CH 100V 10.3A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube

SKU:2e31bc10533a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

SPP10N10L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 10.3A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SPP10N10L

Description：MOSFET N-CH 100V 10.3A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：154mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id：2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：444 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3-1
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SPP10N10L

SPP10N10L

Single FETs, MOSFETs Overview

The Infineon Technologies SPP10N10L is a SIPMOS power transistor featuring an N-channel enhancement mode logic-level design. It operates with a drain-source voltage of 100 V and delivers a continuous drain current of 10.3 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 154 mΩ at VGS=10V and 210 mΩ at VGS=4.5V. It supports a single-pulse avalanche energy of 60 mJ and a reverse diode dv/dt rating of 6 kV/µs. Power dissipation reaches 50 W at 25°C, with an operating junction temperature range spanning from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive capability for direct interface with standard digital logic circuits
Avalanche-rated construction supporting robust energy handling during switching transients
High-speed reverse diode characterized by specific dv/dt ratings for demanding commutation scenarios

Single FETs, MOSFETs Applications

DC-DC converter topologies requiring high efficiency and compact thermal management
Motor control systems utilizing low-voltage power stages
General-purpose switching applications in industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the package marking matches the specified P-TO220-3-1 configuration. Review the datasheet for any updates regarding lead-free compliance or material declarations prior to final integration into production designs.

Single FETs, MOSFETs Selection Notes

Evaluate the thermal resistance characteristics against the specific PCB footprint and cooling requirements of the target application. Ensure the gate drive voltage meets the minimum threshold for optimal conduction performance. Consider the pulsed current capabilities when designing protection circuits for inductive loads.

Single FETs, MOSFETs Part Context

This component belongs to the SIPMOS family of power transistors manufactured by Infineon Technologies. It utilizes planar trench technology optimized for low on-resistance and fast switching speeds. The part is designed for general-purpose power switching applications where reliability and thermal performance are critical factors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include SPI10N10L and SPB10N10L, which share identical electrical specifications but utilize different packages (P-TO262-3-1 and P-TO263-3-2 respectively). Verify pinout compatibility before implementation.