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SPP12N50C3HKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 560V 11.6A TO220-3. Review the specifications below when checking this part for your BOM.
The SPP12N50C3 is a CoolMOS C3 N-channel power transistor manufactured by Infineon Technologies. It features a PG-TO-220-3-31 package with full isolation rated at 2500 VAC for one minute. The device provides a drain-source breakdown voltage of 500 V and supports a continuous drain current of 11.6 A at 25 °C. Its maximum on-state resistance is 0.38 Ω, with a gate charge of 49 nC. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific ordering code Q67040-S4579 against the required PG-TO-220-3-31 fully isolated package variant. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure the design accounts for the thermal characteristics specified in the datasheet to maintain junction temperatures within safe operating limits during operation.
Select this component when high voltage isolation is required between the drain and the heatsink. The CoolMOS C3 technology offers improved transconductance and lower gate charge compared to standard MOSFETs. Consider the thermal resistance values for your specific cooling strategy to ensure reliable performance under continuous load conditions.
This part belongs to the CoolMOS C3 family, representing a high-voltage silicon technology designed for efficiency. It is distinct from other packages like SPI or SPA which use different form factors. The SPP designation specifically indicates the fully isolated TO-220 variant suitable for direct mounting without additional insulators.
Check for updated CoolMOS generations such as C5 or C7 if higher performance is needed. Verify pinout compatibility with existing PCB footprints before substituting. Ensure replacement parts meet the same isolation voltage ratings if used in similar safety-critical configurations.
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