SPP47N10L

Single FETs, MOSFETs Overview

The SPP47N10L is a SIPMOS power transistor featuring an N-channel enhancement mode logic-level design. It operates with a drain-source voltage of 100 V and supports a continuous drain current of 47 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 26 mΩ at VGS=10V and 33A, or 40 mΩ at VGS=4.5V and 33A. It is rated for 175 W power dissipation and includes avalanche and dv/dt ratings. The component functions within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Logic level gate drive capability for direct interface with standard logic circuits
• Avalanche energy rated performance for robustness against inductive switching transients
• High dv/dt rating to withstand rapid voltage changes during commutation
• Extended operating temperature range up to 175°C for high-temperature environments

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control applications
• Load switching circuits
• Power amplifiers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67040-S4177 matches the required P-TO220-3-1 package configuration. Confirm that the component meets all necessary safety standards for the intended application environment. Ensure that thermal management solutions align with the specified thermal resistance values provided in the datasheet to maintain safe operating temperatures under load conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V N-channel MOSFET with logic-level gate drive is required. Consider the 26 mΩ maximum on-resistance at 10 V gate drive for low conduction losses. Evaluate the 175 W power dissipation capability relative to the system's thermal design constraints. Verify compatibility with the P-TO220-3-1 mounting style for the target PCB layout.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS family of power transistors. It utilizes planar strip technology to achieve low on-state resistance and fast switching speeds. The device is designed for general-purpose power switching applications requiring high reliability and efficient thermal performance in compact packages.

Single FETs, MOSFETs Replacement Considerations

Check for equivalent parts with matching 100 V rating, similar RDS(on) specifications, and compatible TO-220 packaging. Ensure replacement devices support logic-level gate drive and meet the same thermal and electrical safety requirements.