SPW47N60C3FKSA1

$10.22

Description：MOSFET N-CH 650V 47A TO247-3
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tube

SKU:8c8cd38e7ed6 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

SPW47N60C3FKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 47A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SPW47N60C3FKSA1

Description：MOSFET N-CH 650V 47A TO247-3
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs：320 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：415W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO247-3-1
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for SPW47N60C3FKSA1

SPW47N60C3FKSA1

Single FETs, MOSFETs Overview

The SPW47N60C3FKSA1 is a single N-channel power MOSFET from Infineon Technologies, belonging to the CoolMOS C3 series. It utilizes silicon technology and features a PG-TO247-3-1 through-hole package. The device supports a drain-source voltage of 650 V and delivers a continuous drain current of 47 A at case temperature. Its maximum on-resistance is 70 mΩ at 10 V gate drive. Key electrical parameters include a gate charge of 320 nC at 10 V, an input capacitance of 6800 pF at 25 V, and a threshold voltage ranging up to 3.9 V at 2.7 mA. The component operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 415 W.

Single FETs, MOSFETs Feature Summary

Integrates CoolMOS C3 superjunction technology for optimized switching performance
Features low on-resistance to minimize conduction losses in high-power applications
Designed for robust operation across extended industrial temperature ranges

Single FETs, MOSFETs Applications

High-frequency switched-mode power supplies
Industrial motor control systems
Uninterruptible power supply (UPS) circuits

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering code including suffixes such as FKSA1 to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status via official documentation before integration. Check the lifecycle status as this specific part may be marked as not recommended for new designs; consult the manufacturer for current availability and potential obsolescence warnings prior to final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 650 V rating and 47 A continuous current capacity are required in a TO-247 form factor. Evaluate the 70 mΩ on-resistance against thermal management requirements for the target application load. Ensure the gate drive circuit can support the specified 320 nC gate charge for efficient switching transitions without excessive driver stress or delay.

Single FETs, MOSFETs Part Context

This device is part of the broader CoolMOS C3 family of superjunction MOSFETs manufactured by Infineon Technologies. These components are engineered to replace traditional planar MOSFETs in high-voltage applications, offering superior figure-of-merit characteristics. The specific model represents a standard industry package variant designed for reliable through-hole mounting in power electronics assemblies.