SQ1563AEH-T1_GE3

Overview

The SQ1563AEH-T1_GE3 is a dual N- and P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates up to +175 °C junction temperature. The device is housed in an SC-70 (SOT-363) package with six leads. At VGS = ±4.5 V, the on-resistance is typically 0.280 Ω for the N-channel and 0.575 Ω for the P-channel. Continuous drain current reaches 0.85 A for both channels at 25 °C. The component is AEC-Q101 qualified and includes 100% Rg and UIS testing.

Feature Summary

• Dual configuration integrating complementary N- and P-channel transistors within a single compact SMD footprint.
• TrenchFET power MOSFET architecture designed to minimize on-state resistance and switching losses.
• Automotive-grade reliability achieved through AEC-Q101 qualification and comprehensive gate resistance and unclamped inductive switching verification.

Applications

• Low-power load switches requiring small form factors
• DC-DC converter synchronous rectification stages
• Battery protection circuits in portable electronic devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance requirements and tape-and-reel specifications. Ensure that the requested part number matches the exact electrical characteristics and package type required for the design. Cross-reference the document revision date to guarantee access to the most current technical parameters and safety warnings.

Selection Notes

Select this component when a dual complementary switch is needed in a minimal surface-mount area. Evaluate thermal performance based on the application's PCB copper area, as the junction-to-ambient resistance varies significantly with board layout. Confirm that the operating voltage remains within the 20 V limit and that the continuous current does not exceed the rated 0.85 A under expected thermal conditions.

Part Context

This device belongs to the SQ series of low-voltage MOSFETs manufactured by Vishay Siliconix. It utilizes the SC-70 dual package, which provides a cost-effective solution for space-constrained designs. The product line emphasizes high density and improved thermal handling compared to older alloy leadframe versions.

Replacement Considerations

Direct replacements must match the 20 V rating, SC-70-6 package, and complementary channel configuration. Verify pinout compatibility between Drain-Gate-Source arrangements. Check if alternative parts offer similar on-resistance values and thermal resistance ratings to ensure equivalent circuit performance without redesigning the footprint.

FAQ

What is the maximum junction temperature for the SQ1563AEH?

The maximum operating junction and storage temperature range is -55 °C to +175 °C.

How does the on-resistance vary with gate voltage?

At VGS = ±4.5 V, RDS(on) is typically 0.280 Ω (N-Ch) and 0.575 Ω (P-Ch). At VGS = ±2.5 V, it increases to 0.360 Ω and 1.300 Ω respectively.

Is the device suitable for automotive applications?

Yes, the SQ1563AEH is AEC-Q101 qualified, indicating it meets automotive reliability standards.