SQ1912AEEH-T1_GE3

Overview

The SQ1912AEEH-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage and a continuous drain current of 0.8 A at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C. On-state resistance is specified as 0.28 Ω at VGS = 4.5 V, 0.36 Ω at VGS = 2.5 V, and 0.45 Ω at VGS = 1.8 V. Total gate charge is typically 1.25 nC at VGS = 4.5 V. Maximum power dissipation is 1.5 W at 25 °C case temperature. The component is housed in a SC-70 (SOT-363) package with six leads.

Feature Summary

• Dual N-channel configuration integrated into a compact SC-70 package for space-constrained designs.
• Qualified under the AEC-Q101 standard for automotive reliability requirements.
• TrenchFET technology provides low on-resistance across various gate drive voltages.

Applications

• Automotive load switching applications
• Low-power DC-DC converter circuits
• General-purpose small signal switching

Procurement Notes

Verify that the ordering suffix matches the required lead-free and halogen-free specifications. Confirm the package type corresponds to the SC-70 footprint. Ensure the component meets the specific AEC-Q101 qualification standards required for the target application environment.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a minimal footprint. Evaluate the thermal performance based on the specific PCB copper area and ambient conditions. Verify that the available gate drive voltage supports the desired on-state resistance level.

Part Context

This part belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance in a small SC-70 package. The device is designed specifically for high-reliability automotive environments requiring robust thermal and electrical performance.

Replacement Considerations

Check pinout compatibility and package dimensions against existing designs. Verify that the replacement device meets or exceeds the original voltage, current, and thermal ratings. Ensure the new component holds necessary automotive qualifications if applicable.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is ±12 V.

How does the on-resistance vary with gate voltage?

The typical on-resistance is 0.28 Ω at VGS = 4.5 V, 0.36 Ω at VGS = 2.5 V, and 0.45 Ω at VGS = 1.8 V.

Is this component qualified for automotive use?

Yes, the SQ1912AEEH is qualified according to the AEC-Q101 standard.