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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.8A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Tc)
- Rds On (Max) @ Id, Vgs：280mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：75pF @ 10V
- Power - Max：1.5W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ1912EH-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and supports a continuous drain current of 0.8 A. The device operates within a junction temperature range of -55 °C to +175 °C and is housed in a compact SOT-363 (SC-70 Dual) package. Key electrical parameters include a maximum on-state resistance of 0.28 Ω at VGS = 4.5 V and a gate charge of 1.15 nC. It meets AEC-Q101 qualification standards for automotive reliability.
Feature Summary
- AEC-Q101 qualified for automotive applications
- TrenchFET power MOSFET technology
- Enhanced thermal performance via copper leadframe
- 100% RDS(on) tested
Applications
- Automotive load switching
- Small to medium load applications requiring miniaturized packages
- Low-power DC-DC converter circuits
Procurement Notes
Verify the component against official Vishay datasheet specifications before integration. Confirm that the ordering suffix matches the required tape-and-reel packaging format. Ensure the supplier provides traceability documentation consistent with automotive quality standards.
Selection Notes
Select this component for designs prioritizing high-temperature operation up to 175 °C and strict space constraints. Evaluate the thermal resistance characteristics based on the specific PCB copper area available. Consider the low gate charge requirements when designing the driving circuitry for optimal switching efficiency.
Part Context
This part belongs to the SQ series of dual-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the SC-70 Dual (SOT-363) package configuration, which integrates two independent channels into a single six-lead footprint. The device represents a copper leadframe variant designed to improve thermal dissipation compared to traditional alloy versions.
Replacement Considerations
Direct replacements must match the 20 V rating, 0.8 A current capacity, and SOT-363 package. Verify that any substitute also holds AEC-Q101 qualification if used in automotive contexts. Check pinout compatibility to ensure Drain-Gate-Source alignment.
