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The SQ3985EV-T1_BE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -20 V drain-source voltage and a continuous drain current of -3.9 A at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C. Key electrical parameters include a maximum on-resistance of 0.145 Ω at VGS = -4.5 V and 0.200 Ω at VGS = -2.5 V. Total gate charge is typically 3.1 nC at VGS = -4.5 V. It is housed in a TSOP-6 surface-mount package.
Verify the specific ordering suffix against official documentation to confirm compliance with halogen-free requirements and lead finish specifications. Ensure that the component marking code matches the datasheet reference before integration into production assemblies.
Select this component when a dual P-channel configuration is required in a compact TSOP-6 footprint. Evaluate thermal management requirements based on the specified junction-to-foot resistance and ensure the gate drive voltage meets the minimum threshold for the desired on-state resistance level.
This part belongs to the SQ series of automotive MOSFETs manufactured by Vishay Siliconix. It shares the TSOP-6 package form factor with other devices in the lineup but is distinguished by its specific -20 V rating and dual-channel topology designed for space-constrained automotive electronics.
SQ3985EV-T1_GE3
The maximum single-pulse avalanche energy is 3.6 mJ when measured with an inductance of 0.1 mH.
The maximum on-resistance is 0.145 Ω at VGS = -4.5 V, 0.200 Ω at VGS = -2.5 V, and 0.300 Ω at VGS = -1.8 V.
Yes, the forward source-drain voltage is specified as a maximum of 1.2 V at a source current of -1.6 A with VGS = 0 V.