SQ3985EV-T1_BE3

SQ3985EV-T1_BE3

$0.90
  • Description:MOSFET 2P-CH 20V 3.9A 6TSOP
  • Series:TrenchFET®

SKU:a71a25ca5f59 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 3.9A 6TSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
  • Rds On (Max) @ Id, Vgs:145mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:350pF @ 10V
  • Power - Max:3W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQ3985EV-T1_BE3

Overview

The SQ3985EV-T1_BE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -20 V drain-source voltage and a continuous drain current of -3.9 A at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C. Key electrical parameters include a maximum on-resistance of 0.145 Ω at VGS = -4.5 V and 0.200 Ω at VGS = -2.5 V. Total gate charge is typically 3.1 nC at VGS = -4.5 V. It is housed in a TSOP-6 surface-mount package.

Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • TrenchFET power MOSFET architecture for optimized performance
  • 100% tested for RDS(on) and single-pulse avalanche energy

Applications

  • Automotive load switching applications
  • High-side power control circuits
  • Low-voltage DC-DC converter input stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance with halogen-free requirements and lead finish specifications. Ensure that the component marking code matches the datasheet reference before integration into production assemblies.

Selection Notes

Select this component when a dual P-channel configuration is required in a compact TSOP-6 footprint. Evaluate thermal management requirements based on the specified junction-to-foot resistance and ensure the gate drive voltage meets the minimum threshold for the desired on-state resistance level.

Part Context

This part belongs to the SQ series of automotive MOSFETs manufactured by Vishay Siliconix. It shares the TSOP-6 package form factor with other devices in the lineup but is distinguished by its specific -20 V rating and dual-channel topology designed for space-constrained automotive electronics.

Replacement Considerations

SQ3985EV-T1_GE3

FAQ

What is the maximum single-pulse avalanche energy (EAS) for this device?

The maximum single-pulse avalanche energy is 3.6 mJ when measured with an inductance of 0.1 mH.

How does the on-resistance vary with gate-source voltage?

The maximum on-resistance is 0.145 Ω at VGS = -4.5 V, 0.200 Ω at VGS = -2.5 V, and 0.300 Ω at VGS = -1.8 V.

Is the source-drain diode characterized for forward voltage?

Yes, the forward source-drain voltage is specified as a maximum of 1.2 V at a source current of -1.6 A with VGS = 0 V.

SQ3985EV-T1_BE3SQ3985EV-T1_BE3
$0.90
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