SQ3987EV-T1_GE3

SQ3987EV-T1_GE3

$0.84
  • Description:MOSFET 2P-CH 30V 3A 6TSOP
  • Series:TrenchFET®

SKU:7cab684aacd4 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 3A 6TSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3A (Tc)
  • Rds On (Max) @ Id, Vgs:133mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:570pF @ 15V
  • Power - Max:1.67W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQ3987EV-T1_GE3

Overview

The Vishay Siliconix SQ3987EV-T1_GE3 is an automotive-grade dual P-channel MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports a continuous drain current of -2.75 A at a junction temperature of 150 °C. The device operates within a temperature range of -55 °C to +175 °C. On-state resistance is specified as 0.110 Ω at VGS = -10 V and 0.185 Ω at VGS = -4.5 V. Packaged in a TSOP-6 surface-mount configuration, it includes integrated body diodes with a reverse recovery time of 28 ns.

Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • TrenchFET power MOSFET architecture for optimized performance
  • Dual channel configuration in a compact TSOP-6 package

Applications

  • Automotive load switching applications
  • High-side power control circuits
  • Power distribution modules in vehicle electronics

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and material categorization requirements by referencing the manufacturer's compliance database before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring dual high-side switching with low on-resistance in a small footprint. Evaluate thermal management strategies based on the 150 °C/W junction-to-ambient rating for steady-state operation. Confirm that gate drive voltages align with the specified thresholds for optimal conduction characteristics.

Part Context

This part belongs to the SQ series of Vishay Siliconix MOSFETs, designed specifically for automotive environments. It integrates two independent P-channel devices into a single TSOP-6 package, offering space savings compared to discrete solutions while maintaining robust electrical performance under varying thermal conditions.

Replacement Considerations

Direct replacements must match the TSOP-6 package, -30 V rating, and dual P-channel configuration. Verify equivalent RDS(on) values and thermal resistance ratings to ensure compatibility with existing PCB land patterns and cooling designs without modifying the circuit layout.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175 °C.

Is the device suitable for automotive applications?

Yes, the SQ3987EV is AEC-Q101 qualified for automotive use.

What is the typical total gate charge?

The typical total gate charge (Qg) is 9.7 nC at VGS = -10 V and VDS = -15 V.

SQ3987EV-T1_GE3SQ3987EV-T1_GE3
$0.84
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