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The Vishay Siliconix SQ3987EV-T1_GE3 is an automotive-grade dual P-channel MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports a continuous drain current of -2.75 A at a junction temperature of 150 °C. The device operates within a temperature range of -55 °C to +175 °C. On-state resistance is specified as 0.110 Ω at VGS = -10 V and 0.185 Ω at VGS = -4.5 V. Packaged in a TSOP-6 surface-mount configuration, it includes integrated body diodes with a reverse recovery time of 28 ns.
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and material categorization requirements by referencing the manufacturer's compliance database before finalizing procurement orders.
Select this component when designing circuits requiring dual high-side switching with low on-resistance in a small footprint. Evaluate thermal management strategies based on the 150 °C/W junction-to-ambient rating for steady-state operation. Confirm that gate drive voltages align with the specified thresholds for optimal conduction characteristics.
This part belongs to the SQ series of Vishay Siliconix MOSFETs, designed specifically for automotive environments. It integrates two independent P-channel devices into a single TSOP-6 package, offering space savings compared to discrete solutions while maintaining robust electrical performance under varying thermal conditions.
Direct replacements must match the TSOP-6 package, -30 V rating, and dual P-channel configuration. Verify equivalent RDS(on) values and thermal resistance ratings to ensure compatibility with existing PCB land patterns and cooling designs without modifying the circuit layout.
The maximum operating junction temperature is +175 °C.
Yes, the SQ3987EV is AEC-Q101 qualified for automotive use.
The typical total gate charge (Qg) is 9.7 nC at VGS = -10 V and VDS = -15 V.