SQ3989EV-T1_GE3

Overview

The Vishay Siliconix SQ3989EV-T1_GE3 is an automotive-grade dual P-channel MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports continuous drain currents of -2.5 A at 25 °C case temperature. The device offers low on-state resistance, typically 0.140 Ω at VGS = -10 V and 0.265 Ω at VGS = -4.5 V. Packaged in a TSOP-6 surface-mount configuration, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and undergoes 100% Rg and UIS testing for reliability.

Feature Summary

• Automotive-grade qualification compliant with AEC-Q101 standards
• TrenchFET power MOSFET architecture for optimized performance
• Dual P-Channel configuration in a compact TSOP-6 package
• Validated against 100% gate resistance and unclamped inductive surge testing

Applications

• Automotive load switching applications
• High-side power control circuits
• General-purpose power management in vehicle electronics

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the procurement channel sources components directly from authorized distributors to maintain traceability and authenticity. Cross-reference the manufacturer part number with the latest datasheet revision to confirm current production status and availability constraints.

Selection Notes

Select this component for designs requiring dual high-side switching with a -30 V rating. Evaluate thermal dissipation requirements based on the specified junction-to-ambient resistance of 150 °C/W. Confirm that the gate drive voltage meets the threshold requirements for the desired on-resistance level. Validate the layout against the recommended land pattern provided in the package information document.

Part Context

This component belongs to the Vishay Siliconix SQ3989 series of automotive dual P-channel MOSFETs. It shares the TSOP-6 package form factor with other devices in the family but is distinguished by its specific electrical ratings and TrenchFET technology implementation. The series targets robust performance in demanding automotive environments.

Replacement Considerations

Direct substitutes include the SQ3989EV-T1_BE3 variant, which differs only in packaging format. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers' parts.