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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Rds On (Max) @ Id, Vgs：48mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1910pF @ 30V
- Power - Max：5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ4917EY-T1_BE3 is an automotive-grade dual P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and holds AEC-Q101 qualification for reliability in demanding environments. The device features a -60 V drain-source voltage rating and supports continuous drain currents of -8 A per leg at 25 °C. On-state resistance is specified at 0.048 Ω at VGS = -10 V and 0.0612 Ω at VGS = -4.5 V. Packaged in an SO-8 surface-mount format, it operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Automotive-grade reliability with AEC-Q101 qualification
- TrenchFET power MOSFET architecture for optimized performance
- Comprehensive testing including 100% Rg and UIS verification
Applications
- Automotive electronic control units (ECUs)
- High-side load switching applications
- Power distribution modules in vehicles
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm current production lifecycle status directly with the manufacturer or authorized distributors, as availability may vary. Ensure all technical parameters meet the design requirements before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring dual high-side switching with robust automotive qualification. Evaluate thermal management strategies based on the specified junction-to-ambient and junction-to-foot thermal resistances. Verify that gate drive voltages align with the specified thresholds for optimal on-state resistance performance across the operating temperature range.
Part Context
This part belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It is designed specifically for high-reliability applications where space constraints and thermal efficiency are critical. The dual configuration allows for compact circuit layouts in power management systems.
Replacement Considerations
Consult official substitution lists from Vishay for verified alternatives. Ensure any replacement matches the pinout, voltage ratings, and thermal characteristics. Cross-reference AEC-Q101 qualification if automotive compliance is mandatory.
