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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Rds On (Max) @ Id, Vgs：48mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1910pF @ 30V
- Power - Max：5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TA)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ4917EY-T1_GE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -60 V drain-source voltage and supports continuous drain currents of -8 A per leg at 25 °C. The device offers low on-resistance values of 0.048 Ω at VGS = -10 V and 0.0612 Ω at VGS = -4.5 V. Packaged in an SO-8 surface-mount format, it operates within a junction temperature range of -55 °C to +175 °C. The component holds AEC-Q101 qualification and includes 100% gate resistance and unclamped inductive switching (UIS) testing.
Feature Summary
- Dual P-channel configuration with integrated body diodes for high-side switching applications
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture providing optimized on-resistance
- Comprehensive testing including 100% gate resistance and UIS verification
Applications
- Automotive load switching circuits
- High-side power management modules
- Motor control interfaces requiring dual channel isolation
Procurement Notes
Verify the specific ordering suffix against official documentation to ensure compliance with lead-free and halogen-free material requirements. Confirm that the requested package variant matches the intended PCB footprint dimensions. Validate that the component meets the necessary automotive qualification standards for the target application environment before finalizing procurement orders.
Selection Notes
Evaluate the thermal performance based on the specified junction-to-foot resistance when designing heat dissipation strategies. Ensure the gate drive voltage aligns with the threshold characteristics to achieve the desired on-state resistance levels. Consider the maximum pulsed drain current capabilities for handling transient loads during startup or fault conditions.
Part Context
This component belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It is designed specifically for demanding environments requiring robust switching performance and high thermal stability. The dual configuration allows for compact circuit designs while maintaining electrical isolation between channels.
Replacement Considerations
Direct substitutes must match the dual P-channel topology, -60 V rating, and SO-8 package. Verify equivalent RDS(on) specifications and AEC-Q101 qualification status to ensure functional compatibility without redesigning the host circuit board.
