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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1465pF @ 15V
- Power - Max：4.4W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ4920EY is an automotive-grade, dual N-channel MOSFET from Vishay Siliconix utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates up to +175 °C junction temperature. Each channel provides an 8 A continuous drain current with a maximum on-resistance of 0.0175 Ω at VGS = 4.5 V and 0.0145 Ω at VGS = 10 V. The device is housed in an SO-8 package and includes an integrated body diode.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Dual configuration integrating two independent N-channel MOSFETs
- TrenchFET architecture optimized for low conduction losses
- Validated against 100% Rg and UIS testing requirements
Applications
- Automotive power distribution modules
- High-side or low-side load switching circuits
- DC motor control applications
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets the required AEC-Q101 qualification status for your target application. Ensure thermal management aligns with the specified junction-to-ambient resistance values under your operating conditions.
Selection Notes
Select this component when a dual-channel solution is required within a compact SO-8 footprint. Evaluate the gate charge and capacitance parameters against your driver capabilities to ensure adequate switching speeds. Consider the thermal dissipation limits based on your PCB copper area and ambient temperature constraints.
Part Context
This part belongs to the SQ series of Vishay Siliconix power MOSFETs designed for robust performance in demanding environments. The dual-channel design allows for space-efficient implementation of bridge configurations or redundant switching paths within a single surface-mount package.
Replacement Considerations
Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with other dual-channel devices without validating pinout compatibility and electrical parameter margins.
