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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 5A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Rds On (Max) @ Id, Vgs：75mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：480pF @ 25V
- Power - Max：3.3W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ4937EY-T1_BE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports continuous drain currents of -5 A per leg. The device offers low on-state resistance, typically 0.075 Ω at VGS = -10 V and 0.145 Ω at VGS = -4.5 V. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55 °C to +175 °C. Packaged in an SO-8 surface-mount format, the component includes integrated body diodes with a pulsed current rating of -20 A.
Feature Summary
- Dual independent P-channel configuration housed in a compact SO-8 package
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET power technology ensuring low gate charge and fast switching speeds
- 100% tested for gate resistance and unclamped inductive switching (UIS)
Applications
- Automotive load switching applications
- High-side power control circuits
- Motor driver interfaces
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The BE3 suffix indicates lead-free and halogen-free compliance. Confirm that the required package variant matches the design specifications, as manufacturing locations may vary while maintaining parametric consistency.
Selection Notes
Select this component for designs requiring dual isolated channels in a small footprint. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Evaluate thermal management strategies based on the specified junction-to-ambient resistance values for the target PCB layout.
Part Context
This part belongs to the SQ4937EY family of automotive dual P-channel MOSFETs. The SQ4937EY-T1_GE3 represents the standard commercial version of this component. Both variants share identical electrical characteristics and packaging, differing primarily in their specific ordering suffixes and associated compliance markings.
Replacement Considerations
The SQ4937EY-T1_GE3 serves as a direct functional equivalent. Verify pinout compatibility and ensure the replacement meets the same AEC-Q101 qualification standards if automotive reliability is required.
