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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 5A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5A (Tc)
- Rds On (Max) @ Id, Vgs：75mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：480pF @ 25V
- Power - Max：3.3W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQ4937EY-T1_GE3 is an automotive-grade dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -30 V drain-source voltage and supports continuous drain currents of -5 A per leg at 25 °C. The device achieves low on-resistance values of 0.075 Ω at VGS = -10 V and 0.145 Ω at VGS = -4.5 V. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55 °C to +175 °C. Packaged in an SO-8 surface-mount configuration, the component includes 100% Rg and UIS testing for enhanced reliability.
Feature Summary
- Dual P-channel configuration with independent channel control
- AEC-Q101 qualified for automotive electronic applications
- TrenchFET power MOSFET architecture for optimized performance
- Comprehensive 100% gate resistance and single pulse avalanche testing
Applications
- Automotive load switching circuits
- High-side power management modules
- Motor driver interfaces
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and compliance status. Ensure that the procurement source provides valid traceability records. Confirm that the delivered components match the exact part number designation to avoid functional discrepancies in circuit design.
Selection Notes
Evaluate the thermal resistance characteristics based on the specific PCB copper area and mounting conditions. Verify that the gate drive voltage meets the minimum requirements for optimal on-state resistance. Consider the maximum pulsed current capabilities when designing for transient load scenarios or startup conditions.
Part Context
This component belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It utilizes TrenchFET technology to deliver high efficiency in a compact SO-8 package. The product line is specifically engineered to meet the rigorous reliability and environmental standards required for modern automotive electronics systems.
Replacement Considerations
Check for direct substitutes within the same Vishay family that share identical pinouts and electrical ratings. Verify that any alternative component maintains the same AEC-Q101 qualification status and thermal performance metrics.
