SQ4946AEY-T1_BE3

SQ4946AEY-T1_BE3

$0.45
  • Description:MOSFET 2N-CH 60V 7A 8SOIC
  • Series:TrenchFET®

SKU:3ad6aa059868 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 7A 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:7A (Tc)
  • Rds On (Max) @ Id, Vgs:40mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:750pF @ 25V
  • Power - Max:4W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQ4946AEY-T1_BE3

Overview

The SQ4946AEY-T1_BE3 is a dual N-channel enhancement mode MOSFET manufactured by Vishay Siliconix using TrenchFET technology. It features a SOIC-8 surface-mount package and operates with a drain-source voltage of 60 V and a continuous drain current of 7 A per channel. The device exhibits a maximum on-resistance of 82.9 mΩ at a gate-source voltage of 10 V, with a gate charge of 14.3 nC. It supports a power dissipation of 4 W and functions within an ambient temperature range of -55°C to +175°C.

Feature Summary

  • Dual N-channel configuration in a compact SOIC-8 package
  • TrenchFET technology for low on-resistance performance
  • High thermal stability with a maximum junction temperature of 175°C

Applications

  • DC-DC converter synchronous rectification
  • Load switching applications
  • Power management circuits requiring dual N-channel control

Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm exact electrical tolerances and tape-and-reel specifications. Ensure the component matches the required RoHS compliance status for your assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a dual N-channel solution is required in an SOIC-8 footprint. The 60 V rating and 7 A current capacity suit low-voltage power distribution tasks. Evaluate the 82.9 mΩ on-resistance against thermal constraints to ensure adequate heat dissipation without additional cooling measures in the target application environment.

Part Context

This part belongs to the Vishay SQ series of TrenchFET power MOSFETs. The SQ4946 variant specifically provides dual-channel functionality, distinguishing it from single-channel counterparts like the SQ3418. The AEY suffix indicates the specific package and packaging configuration offered by the manufacturer.

Replacement Considerations

Direct replacements include the SQ4946CEY-T1_GE3, which shares identical electrical characteristics but may differ in packaging or ordering suffixes. Verify pinout compatibility and thermal resistance values when substituting.

SQ4946AEY-T1_BE3SQ4946AEY-T1_BE3
$0.45
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