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The SQ4946AEY-T1_BE3 is a dual N-channel enhancement mode MOSFET manufactured by Vishay Siliconix using TrenchFET technology. It features a SOIC-8 surface-mount package and operates with a drain-source voltage of 60 V and a continuous drain current of 7 A per channel. The device exhibits a maximum on-resistance of 82.9 mΩ at a gate-source voltage of 10 V, with a gate charge of 14.3 nC. It supports a power dissipation of 4 W and functions within an ambient temperature range of -55°C to +175°C.
Verify the specific suffix against official Vishay documentation to confirm exact electrical tolerances and tape-and-reel specifications. Ensure the component matches the required RoHS compliance status for your assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when a dual N-channel solution is required in an SOIC-8 footprint. The 60 V rating and 7 A current capacity suit low-voltage power distribution tasks. Evaluate the 82.9 mΩ on-resistance against thermal constraints to ensure adequate heat dissipation without additional cooling measures in the target application environment.
This part belongs to the Vishay SQ series of TrenchFET power MOSFETs. The SQ4946 variant specifically provides dual-channel functionality, distinguishing it from single-channel counterparts like the SQ3418. The AEY suffix indicates the specific package and packaging configuration offered by the manufacturer.
Direct replacements include the SQ4946CEY-T1_GE3, which shares identical electrical characteristics but may differ in packaging or ordering suffixes. Verify pinout compatibility and thermal resistance values when substituting.