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SQJ166ELP-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 50V 50A TO252AA. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SQJ166ELP-T1_GE3
- Description：MOSFET N-CH 50V 50A TO252AA
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1903 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：89W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SQJ166ELP-T1_GE3
Single FETs, MOSFETs Overview
The SQJ166ELP-T1_GE3 is an automotive-grade N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a 60 V drain-source voltage rating and operates up to +175 °C junction temperature. The device is housed in a PowerPAK SO-8L package. Key electrical parameters include a continuous drain current of 67 A at 25 °C case temperature and a maximum on-state resistance of 19.7 mΩ at 175 °C. It is fully qualified under AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- TrenchFET Gen IV power MOSFET architecture
- 100% gate charge and unclamped inductive switching tested
Single FETs, MOSFETs Applications
- Automotive electronic control units
- Power distribution systems
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm that the component meets all required AEC-Q101 qualification standards for your specific application environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the datasheet.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel configuration with high current capability is required in a compact surface-mount footprint. The low on-resistance supports efficient power handling in automotive environments. Verify that the 60 V breakdown voltage aligns with system operating voltages and transient conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the PowerPAK SO-8L package, which provides enhanced thermal performance compared to standard packages. The series is designed specifically for demanding automotive applications requiring high reliability and robust switching characteristics.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for direct cross-references. No alternative part numbers are explicitly confirmed as substitutes in the provided source material.
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