SQJ208EP-T1_GE3

$1.73

Description：MOSFET 2N-CH 40V 20A PPAK SO8
Series：TrenchFET®

SKU:43c25af7ffd8 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 20A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs：9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V, 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1700pF @ 25V, 3900pF @ 25V
Power - Max：27W (Tc), 48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual Asymmetric
Grade：Automotive
Qualification：AEC-Q101

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SQJ208EP-T1_GE3

Overview

The Vishay Siliconix SQJ208EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device contains two asymmetric channels in a PowerPAK SO-8L package. Channel 1 provides a continuous drain current of 20 A with a maximum on-resistance of 9.4 mΩ at VGS = 10 V. Channel 2 supports 60 A with a maximum on-resistance of 3.9 mΩ at VGS = 10 V. Both channels are qualified under AEC-Q101 standards.

Feature Summary

AEC-Q101 qualified for automotive reliability requirements
TrenchFET power MOSFET technology optimized for synchronous buck applications
Asymmetric dual configuration allowing distinct current handling per channel
100% Rg and UIS tested for enhanced manufacturing quality

Applications

Automotive synchronous buck converter circuits
High-efficiency DC-DC power management modules
Low-voltage automotive load switching systems

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm compliance status and material categorization. Ensure that the component matches the required AEC-Q101 qualification level for your target application environment. Cross-reference the datasheet revision number to validate all electrical parameters before finalizing procurement specifications.

Selection Notes

Select this component when designing low-voltage synchronous rectification stages requiring asymmetric current capabilities. Evaluate thermal resistance values based on the specific PCB copper area and mounting conditions. Confirm that gate drive voltages align with the specified thresholds for optimal on-state performance across the full operating temperature range.

Part Context

This part belongs to the Vishay Siliconix SQJ series of automotive-grade MOSFETs. It utilizes the PowerPAK SO-8L leadless package, which is designed for surface-mount assembly. The asymmetric layout distinguishes it from standard dual-channel devices by providing tailored electrical characteristics for each independent transistor within the single封装.

Replacement Considerations

SQJ200EP-T1_GE3

FAQ

What is the maximum pulsed drain current for Channel 2?

The maximum pulsed drain current (IDM) for Channel 2 is 220 A.

Is the PowerPAK SO-8L package plated?

No, the end of the lead terminal is exposed copper as a result of the singulation process; a solder fillet at the exposed tip is not guaranteed or required.