SQJ260EP-T1_GE3

Overview

The Vishay Siliconix SQJ260EP-T1_GE3 is an automotive-grade dual asymmetric N-channel MOSFET featuring TrenchFET technology and AEC-Q101 qualification. It integrates two distinct channels within a single PowerPAK SO-8L package. Channel 1 provides a drain-source voltage of 60 V, a continuous drain current of 20 A, and an on-resistance of 0.019 Ω at VGS = 10 V. Channel 2 offers a higher current capacity of 54 A with an on-resistance of 0.0085 Ω under the same gate drive conditions. The device supports junction temperatures up to 175 °C and includes 100% Rg and UIS testing.

Feature Summary

• Dual asymmetric configuration integrating two independent N-channel MOSFETs in one leadless PowerPAK SO-8L package.
• TrenchFET power MOSFET technology optimized for synchronous buck applications.
• AEC-Q101 qualified with 100% Rg and Unclamped Inductive Switching (UIS) tested for automotive reliability.

Applications

• Synchronous buck converter circuits
• Automotive power management systems
• High-efficiency DC-DC conversion modules

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part marking against official datasheet documentation. Confirm that the specific ordering suffix matches the required tape and reel packaging specifications. Ensure compliance with RoHS directives and material categorization standards prior to integration into production assemblies.

Selection Notes

Select this component when designing asymmetric half-bridge or synchronous rectifier topologies requiring distinct high-current and standard-current paths. Evaluate thermal resistance ratings based on the specific PCB copper area and mounting constraints. Verify that the gate drive voltage meets the minimum requirements for optimal on-state resistance performance across the intended operating temperature range.

Part Context

This component belongs to the Vishay Siliconix SQJ series of automotive-grade MOSFETs. It utilizes the PowerPAK SO-8L Dual Asymmetric package, which allows for compact board space utilization while managing heat dissipation effectively. The series is designed to meet rigorous automotive reliability standards through specialized trench gate technology.

Replacement Considerations

Direct pin-compatible replacements within the same family include the SQJ261EP-T1_GE3. Verify that any substitute maintains the required AEC-Q101 qualification and matches the asymmetric channel characteristics to ensure circuit functionality remains unchanged.

FAQ

What is the maximum junction temperature rating for the SQJ260EP?

The operating junction and storage temperature range extends from -55 °C to +175 °C.

How does the on-resistance differ between the two channels?

Channel 1 has a typical on-resistance of 0.019 Ω at VGS = 10 V, while Channel 2 features a lower typical on-resistance of 0.0085 Ω under identical conditions.

Is the device suitable for unclamped inductive switching applications?

Yes, the datasheet specifies that the components undergo 100% Unclamped Inductive Switching (UIS) testing.