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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 15A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc), 40A (Tc)
- Rds On (Max) @ Id, Vgs：35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V, 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：550pF @ 25V, 1260pF @ 25V
- Power - Max：27W (Tc), 48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual Asymmetric
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJ262EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. The device contains two asymmetric channels in a PowerPAK SO-8L package. Channel 1 provides a continuous drain current of 15 A with a maximum on-resistance of 0.0355 Ω at VGS = 10 V. Channel 2 supports 40 A with a maximum on-resistance of 0.0155 Ω under the same conditions. The component is AEC-Q101 qualified and undergoes 100% Rg and UIS testing.
Feature Summary
- Dual asymmetric N-channel configuration optimized for synchronous buck applications
- Automotive qualification compliant with AEC-Q101 standards
- TrenchFET power MOSFET architecture ensuring low conduction losses
- Comprehensive reliability validation including 100% gate resistance and single pulse avalanche testing
Applications
- Synchronous buck converter circuits
- Automotive power management systems
- DC-DC conversion modules requiring high thermal stability
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm compliance requirements. Confirm that the PowerPAK SO-8L leadless package singulation process aligns with your soldering profile, as exposed copper tips are standard and do not require a fillet for adequate interconnection.
Selection Notes
Select this component when designing asymmetric dual-channel topologies requiring distinct current handling capabilities within a single footprint. Ensure the PCB layout accommodates the specific pad pattern for the PowerPAK SO-8L asymmetric case outline to maintain thermal performance and electrical integrity.
Part Context
This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the TrenchFET generation technology to achieve low on-resistance. The device is housed in the PowerPAK SO-8L dual asymmetric package, designed to provide efficient thermal dissipation and compact surface-mount integration for high-density electronic assemblies.
Replacement Considerations
Consult the official Vishay datasheet or technical support for confirmed substitute part numbers. Do not assume functional equivalence based solely on voltage and current ratings due to potential differences in package thermal characteristics and switching parameters.
