SQJ560EP-T1_BE3

$1.61

Description：MOSFET N/P-CH 60V 30A PPAK SO8
Series：TrenchFET®

SKU:b4d0ba155b38 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 30A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：30A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs：12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1650pF @ 25V
Power - Max：34W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ560EP-T1_BE3

Overview

The Vishay Siliconix SQJ560EP-T1_BE3 is an automotive-grade dual MOSFET containing N- and P-channel devices in a PowerPAK SO-8L package. It features a 60 V drain-source voltage rating and supports junction temperatures up to 175 °C. The N-channel provides a continuous drain current of 30 A with a maximum on-resistance of 0.012 Ω at VGS = 10 V. The P-channel offers a continuous drain current of -18 A with a maximum on-resistance of 0.0526 Ω at VGS = -10 V. The component is AEC-Q101 qualified and includes 100% Rg and UIS testing.

Feature Summary

Automotive qualification compliant with AEC-Q101 standards
TrenchFET power MOSFET technology for optimized performance
Dual configuration integrating N- and P-channel transistors in one package

Applications

Automotive power management systems
Motor control circuits
High-side and low-side switching applications

Procurement Notes

Verify the complete ordering suffix against the official Vishay documentation to ensure correct packaging and compliance specifications. Confirm that the specific variant matches the required lead-free and halogen-free material categorization. Cross-reference the document number 76266 for the most current technical parameters before finalizing procurement orders.

Selection Notes

Select this component when a compact dual solution is required for 60 V automotive environments. Ensure the PCB layout accommodates the PowerPAK SO-8L dimensions and thermal requirements. Validate that the gate drive voltages align with the specified thresholds for optimal on-state resistance performance under expected load conditions.

Part Context

This part belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance within a leadless PowerPAK SO-8L package. The device is designed specifically for high-reliability applications requiring both N-channel and P-channel functionality in a single footprint.