SQJ560EP-T1_GE3

Overview

The Vishay Siliconix SQJ560EP-T1_GE3 is an automotive-grade dual MOSFET in a PowerPAK SO-8L package, containing one N-channel and one P-channel device. It features TrenchFET technology with AEC-Q101 qualification. The N-channel unit provides a drain-source voltage of 60 V, continuous drain current of 30 A at 25 °C, and a maximum on-resistance of 0.012 Ω at VGS = 10 V. The P-channel unit offers a -60 V rating, -18 A continuous current, and a maximum on-resistance of 0.0526 Ω at VGS = -10 V. Both channels support a junction temperature range from -55 °C to +175 °C.

Feature Summary

• Automotive reliability certified under the AEC-Q101 standard for robust performance in vehicle environments.
• TrenchFET power MOSFET architecture engineered to minimize conduction losses and enhance switching efficiency.
• Dual configuration integrating complementary N- and P-channel transistors within a single leadless surface-mount package.

Applications

• Automotive high-side and low-side load switch circuits
• DC-DC converter bridge topologies
• Motor driver output stages

Procurement Notes

Verify the complete ordering suffix against the manufacturer's official documentation to ensure correct packaging and material compliance. Confirm that the specific revision matches the required datasheet version for design-in validation. Cross-reference the component marking code with the package outline drawing to guarantee authenticity during incoming inspection.

Selection Notes

Evaluate the thermal resistance characteristics relative to the target PCB copper area and airflow conditions. Ensure the gate drive voltage meets the minimum threshold requirements for optimal RDS(on) performance across the full operating temperature range. Verify that the peak pulsed current ratings exceed the application's worst-case transient demands.

Part Context

This component belongs to the Vishay Siliconix SQA/SQJ series of automotive MOSFETs. These devices utilize advanced planar trench technology to deliver superior specific on-resistance compared to conventional planar designs. The series is specifically optimized for applications requiring high current density and reliable operation in harsh automotive electrical environments.

Replacement Considerations

SQJA38EP-T1_GE3

FAQ

Is the SQJ560EP qualified for automotive applications?

Yes, the device is fully qualified according to the AEC-Q101 stress test qualification requirements for integrated circuits.

What is the maximum junction temperature for this component?

The operating junction and storage temperature range extends up to +175 °C.

Does the package include exposed copper pads?

Yes, the PowerPAK SO-8L is a leadless package where the end of the lead terminal is exposed copper as a result of the singulation process.