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The Vishay Siliconix SQJ570EP-T1_BE3 is an automotive-grade dual MOSFET featuring N- and P-channel configurations in a PowerPAK SO-8L package. It utilizes TrenchFET technology and holds AEC-Q101 qualification for reliability. The N-channel device provides a drain-source voltage of 100 V, continuous drain current of 15 A at 25 °C, and a maximum on-resistance of 0.045 Ω at VGS = 10 V. The P-channel counterpart offers -100 V breakdown, -9.5 A continuous current, and a maximum on-resistance of 0.146 Ω at VGS = -10 V. Both channels support operation up to +175 °C junction temperature.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details. Confirm RoHS compliance status through the designated product compliance page. Ensure that the lead-free and halogen-free material categorization matches project requirements before finalizing procurement orders.
Select this component when a matched N- and P-channel pair is required within a single compact footprint. The low thermal resistance supports high-power dissipation needs. Verify gate drive compatibility with the specified threshold voltages and ensure PCB layout accommodates the exposed copper terminals characteristic of the leadless PowerPAK SO-8L package.
This part belongs to the SQJ570EP series from Vishay Siliconix. It is designed specifically for demanding automotive environments requiring robust performance under high temperatures. The dual configuration simplifies circuit design by integrating complementary channel types into one standardized surface-mount package.
Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.
The maximum operating junction temperature is +175 °C.
Yes, the SQJ570EP is AEC-Q101 qualified for automotive use.
The typical total gate charge (Qg) for the N-channel is 9 nC at VGS = 10 V and ID = 1 A.