SQJ844AEP-T1_BE3

$1.49

Description：MOSFET 2N-CH 30V 8A PPAK SO8
Series：TrenchFET®

SKU:ebbb3fc25ff6 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Rds On (Max) @ Id, Vgs：16.6mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1161pF @ 15V
Power - Max：48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ844AEP-T1_BE3

Overview

The SQJ844AEP-T1_BE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage and an 8 A continuous drain current per channel. The device exhibits a maximum on-resistance of 0.0166 Ω at VGS = 10 V and 0.0276 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L (Dual) footprint, it supports junction temperatures up to 175 °C and carries AEC-Q101 qualification.

Feature Summary

Automotive-grade reliability with AEC-Q101 qualification
TrenchFET power MOSFET architecture for low conduction losses
Leadless PowerPAK SO-8L Dual package design

Applications

Automotive electronic control units
Power distribution modules
Low-side switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm material compliance and packaging details. Confirm that the component meets all required automotive standards before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring dual N-channel switching within a 30 V system. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance and thermal management requirements are met.

Part Context

This part belongs to the SQJ844AEP series of automotive dual N-channel MOSFETs. It shares the same core electrical characteristics as the GE3 variant but differs in its specific ordering suffix, which dictates manufacturing origin or material compliance attributes.