SQJ844AEP-T1_GE3

$1.49

Description：MOSFET 2N-CH 30V 8A PPAK SO8
Series：TrenchFET®

SKU:b04a9cad2afd Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：16.6mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1161pF @ 15V
Power - Max：48W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ844AEP-T1_GE3

Overview

The SQJ844AEP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology and qualified to AEC-Q101 standards. It features a 30 V drain-source voltage rating and supports continuous drain currents of 8 A per leg at 25 °C. The device offers a typical on-state resistance of 0.0138 Ω at VGS = 10 V and 0.0276 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L Dual configuration, it provides a maximum power dissipation of 48 W at 25 °C and operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

Dual N-channel configuration with TrenchFET power MOSFET technology
Automotive qualification compliant with AEC-Q101 standards
100% tested for both gate charge and single-pulse avalanche energy

Applications

Automotive electronic systems requiring high reliability
Low-voltage DC-DC converter circuits
High-side or low-side load switching applications

Procurement Notes

Verify the complete ordering designation against official documentation before procurement. Confirm that the specific suffix matches the required package and compliance specifications. Ensure the component meets the necessary automotive quality standards for the intended application environment.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a compact footprint. Evaluate thermal management requirements based on the specified junction-to-ambient resistance. Verify that the gate drive voltage aligns with the optimal on-resistance performance characteristics provided in the datasheet.

Part Context

This part belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8L Dual package to provide two independent channels in a small surface-mount form factor. The product line is designed specifically for robust performance in demanding automotive environments.

Replacement Considerations

Consult official Vishay documentation for verified alternative part numbers. Do not substitute with generic equivalents without validating pinout compatibility and electrical parameter alignment.