SQJ858EP-T1_GE3

Single FETs, MOSFETs Overview

The SQJ858EP-T1_GE3 is a Vishay Siliconix automotive-grade N-channel Power MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 75 A at 25 °C case temperature. The device offers a low on-state resistance of 6 mΩ at VGS = 10 V, ensuring efficient power switching. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55 °C to +175 °C. Packaged in a leadless PowerPAK SO-8L surface-mount configuration, the component provides robust thermal performance with a junction-to-case thermal resistance of 2.2 °C/W.

Single FETs, MOSFETs Feature Summary

• TrenchFET Power MOSFET technology for optimized on-resistance and switching efficiency
• AEC-Q101 qualified for automotive reliability requirements
• 100% tested for gate resistance and single-pulse avalanche energy
• Leadless PowerPAK SO-8L package designed for high-power density applications

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-side and low-side load switch circuits
• DC-DC converter output stages
• Motor control driver interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix GE3 confirms lead-free and halogen-free compliance status before procurement. Confirm that the PowerPAK SO-8L package singulation process results in exposed copper tips, which does not require solder fill for adequate interconnection. Ensure design reviews account for the recommended rework conditions, noting that manual iron soldering is discouraged for this leadless component type.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating is sufficient and high current handling near 75 A is required. The low RDS(on) minimizes conduction losses in high-current paths. Consider the thermal resistance ratings against the expected PCB copper area and ambient conditions. Verify that the gate charge characteristics align with the driving circuit capabilities for the desired switching frequency.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQJ series of automotive-grade N-channel MOSFETs. It utilizes the PowerPAK SO-8L footprint, distinguishing it from standard SO-8 packages by its leadless construction. The series is characterized by TrenchFET technology, providing improved figure-of-merit compared to planar devices. It is designed specifically for environments requiring high reliability and extended temperature operation.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 40 V rating, 75 A current capacity, and PowerPAK SO-8L package. Check datasheets for equivalent RDS(on) values and thermal resistance specifications. Ensure any replacement also holds AEC-Q101 qualification if used in automotive contexts.