SQJ912AEP-T2_GE3

Overview

The Vishay Siliconix SQJ912AEP-T2_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and operates up to 175 °C. Each channel provides a continuous drain current of 30 A at 25 °C case temperature, with a maximum on-state resistance of 0.0093 Ω at VGS = 10 V. The device is AEC-Q101 qualified and includes 100% gate resistance and UIS testing. It is housed in a leadless PowerPAK SO-8L package.

Feature Summary

• Dual N-channel configuration for integrated switching applications
• TrenchFET power MOSFET technology for low conduction losses
• Automotive qualification compliant with AEC-Q101 standards
• Leadless PowerPAK SO-8L package design

Applications

• Automotive power distribution systems
• High-side and low-side load switch circuits
• DC motor control interfaces

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm tape orientation. The datasheet indicates that non-standard orientations like T2 require direct contact with local sales or marketing representatives for accurate ordering codes. Ensure the component matches the required reel specifications before procurement.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact footprint. Verify thermal management requirements against the junction-to-ambient resistance of 85 °C/W when mounted on a standard FR4 PCB. Confirm that the gate drive voltage meets the threshold requirements for optimal RDS(on) performance.

Part Context

This part belongs to the SQJ series of automotive MOSFETs from Vishay Siliconix. It shares the PowerPAK SO-8L package form factor with other devices in the lineup but offers distinct electrical characteristics tailored for 40 V automotive environments.

Replacement Considerations

SQJ912AEP-T1_GE3 is a confirmed substitute with identical electrical parameters but utilizes the standard T1 tape orientation.