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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 30A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Rds On (Max) @ Id, Vgs：12mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1110pF @ 15V
- Power - Max：27W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJ914EP-T1_BE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 30 V drain-source voltage and supports up to 30 A continuous drain current at 25 °C case temperature. The device exhibits a maximum on-resistance of 12 mΩ at VGS = 10 V and 17 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L Dual configuration, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and undergoes 100% gate resistance and unclamped inductive switching testing.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- TrenchFET power MOSFET architecture for optimized performance
- Leadless PowerPAK SO-8L Dual package design
- 100% tested for gate resistance and unclamped inductive switching
Applications
- Automotive electronic control units
- High-side and low-side load switch applications
- Power distribution systems in vehicles
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the requested part matches the exact Vishay document number 77311 specifications. Confirm package type and thermal characteristics align with system constraints before finalizing procurement orders.
Selection Notes
Select this component for designs requiring robust automotive-grade dual N-channel switching capabilities. Evaluate the 30 V rating and 30 A current capacity against peak load requirements. Consider the low on-resistance values for minimizing conduction losses in high-current paths.
Part Context
This component belongs to the Vishay SQJ series of automotive MOSFETs. It is designed specifically for demanding automotive environments where high reliability and thermal stability are critical. The dual configuration allows for efficient bridge or half-bridge implementations in compact PCB layouts.
Replacement Considerations
Consult official Vishay cross-reference documentation for verified substitutes. Ensure any replacement maintains AEC-Q101 qualification and compatible PowerPAK SO-8L footprint dimensions.
