SQJ946EP-T1_GE3

$0.92

Description：MOSFET 2N-CH 40V 15A PPAK SO8
Series：TrenchFET®

SKU:b8f645d0d3ec Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 15A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Rds On (Max) @ Id, Vgs：33mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：600pF @ 25V
Power - Max：27W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：Automotive
Qualification：AEC-Q101

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SQJ946EP-T1_GE3

Overview

The Vishay Siliconix SQJ946EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports a continuous drain current of 15 A per leg at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.033 Ω at VGS = 10 V and 0.039 Ω at VGS = 4.5 V. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55 °C to +175 °C. The component is housed in a leadless PowerPAK SO-8L package with dimensions of 6.15 mm by 5.13 mm.

Feature Summary

AEC-Q101 qualified for automotive reliability requirements
TrenchFET power MOSFET architecture for optimized performance
Dual configuration integrating two independent N-channel devices
100% Rg and UIS tested for enhanced manufacturing quality

Applications

Automotive electronic control units (ECUs)
High-side or low-side load switching applications
Power distribution modules in vehicle systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. Confirm that the PowerPAK SO-8L package variant matches the intended PCB footprint. Ensure that thermal management strategies account for the specified junction-to-ambient resistance values when designing the final assembly.

Selection Notes

Select this component for designs requiring dual channel isolation within a compact surface-mount form factor. Evaluate the gate charge parameters against driver capabilities to ensure adequate switching speeds. Consider the thermal derating curves for continuous operation at elevated ambient temperatures to maintain safe operating area limits.

Part Context

This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It shares the PowerPAK SO-8L package topology with other high-current variants in the lineup. The series is characterized by its TrenchFET generation technology designed to minimize conduction losses while maintaining robust avalanche energy ratings.