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The SQJ952EP-T1_BE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and supports junction temperatures up to 175 °C. Each channel provides a continuous drain current of 23 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.020 Ω at VGS = 10 V and 0.024 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it is fully qualified under AEC-Q101 standards and undergoes 100% gate charge and single-pulse avalanche testing.
Verify the specific ordering suffix against official documentation to confirm compliance with halogen-free and lead-free material categorization requirements. Ensure that procurement channels source directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability throughout the supply chain.
Select this component when designing for automotive environments requiring robust switching capabilities within a compact footprint. Evaluate the thermal resistance characteristics relative to the target PCB copper area, as the junction-to-ambient rating depends heavily on the mounting configuration. Confirm that the gate drive voltage aligns with the specified thresholds for optimal on-state resistance performance.
This part belongs to the Vishay SQJ series of dual N-channel MOSFETs designed specifically for demanding automotive applications. The series leverages advanced TrenchFET technology to deliver high current density and low conduction losses. The PowerPAK SO-8L package provides a small form factor suitable for space-constrained printed circuit board layouts while maintaining effective heat transfer capabilities.
SQJ952EP-T1_GE3