SQJ952EP-T1_BE3

SQJ952EP-T1_BE3

$1.43
  • Description:MOSFET 2N-CH 60V 23A PPAK SO8
  • Series:TrenchFET®

SKU:8d8fad8fe57c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 23A PPAK SO8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:23A (Tc)
  • Rds On (Max) @ Id, Vgs:20mOhm @ 10.3A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 30V
  • Power - Max:25W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SO-8
  • Supplier Device Package:PowerPAK® SO-8
  • Grade:Automotive
  • Qualification:AEC-Q101

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SQJ952EP-T1_BE3

Overview

The SQJ952EP-T1_BE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and supports junction temperatures up to 175 °C. Each channel provides a continuous drain current of 23 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.020 Ω at VGS = 10 V and 0.024 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it is fully qualified under AEC-Q101 standards and undergoes 100% gate charge and single-pulse avalanche testing.

Feature Summary

  • AEC-Q101 qualified for automotive reliability requirements
  • TrenchFET power MOSFET architecture for optimized performance
  • Leadless PowerPAK SO-8L package design for efficient thermal dissipation
  • 100% tested for gate charge and single-pulse avalanche energy

Applications

  • Automotive power distribution systems
  • High-side and low-side load switch applications
  • DC motor control circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance with halogen-free and lead-free material categorization requirements. Ensure that procurement channels source directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability throughout the supply chain.

Selection Notes

Select this component when designing for automotive environments requiring robust switching capabilities within a compact footprint. Evaluate the thermal resistance characteristics relative to the target PCB copper area, as the junction-to-ambient rating depends heavily on the mounting configuration. Confirm that the gate drive voltage aligns with the specified thresholds for optimal on-state resistance performance.

Part Context

This part belongs to the Vishay SQJ series of dual N-channel MOSFETs designed specifically for demanding automotive applications. The series leverages advanced TrenchFET technology to deliver high current density and low conduction losses. The PowerPAK SO-8L package provides a small form factor suitable for space-constrained printed circuit board layouts while maintaining effective heat transfer capabilities.

Replacement Considerations

SQJ952EP-T1_GE3

SQJ952EP-T1_BE3SQJ952EP-T1_BE3
$1.43
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