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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 20A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Rds On (Max) @ Id, Vgs：34.9mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1075pF @ 30V
- Power - Max：35W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The SQJ958EP-T1_GE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +175 °C. Each channel provides a continuous drain current of 20 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.0349 Ω at VGS = 10 V and 0.0385 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L footprint, it is fully qualified under the AEC-Q101 standard for automotive reliability.
Feature Summary
- AEC-Q101 qualified for automotive applications
- TrenchFET power MOSFET technology
- Dual N-channel configuration
Applications
- Automotive electronic systems
- Power switching circuits
- Motor control applications
Procurement Notes
Verify the component against official Vishay datasheet document number 62513 to confirm technical specifications. Ensure the ordering suffix matches the required package and compliance attributes. Validate that the supplier provides traceability documentation consistent with automotive quality standards. Confirm the specific revision level of the datasheet aligns with your design requirements before finalizing procurement.
Selection Notes
Select this component when a dual N-channel MOSFET with low on-resistance and high thermal stability is required. The 60 V rating suits low-voltage automotive power distribution networks. Consider the PowerPAK SO-8L package for compact surface-mount designs requiring efficient heat dissipation. Verify gate drive compatibility with the specified threshold voltage characteristics for optimal switching performance.
Part Context
This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It shares the PowerPAK SO-8L package form factor with other devices in the lineup but differs in electrical ratings. The dual configuration allows for independent control of two channels within a single compact footprint, suitable for bridge drivers or parallel load management.
Replacement Considerations
Direct replacements must match the 60 V rating, dual N-channel configuration, and PowerPAK SO-8L package. Verify that any substitute meets AEC-Q101 qualification if automotive reliability is required. Check on-resistance and thermal resistance values to ensure equivalent performance in the target application.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175 °C.
Is the device qualified for automotive use?
Yes, the SQJ958EP is AEC-Q101 qualified.
What is the typical total gate charge?
The typical total gate charge is 15 nC at VGS = 10 V and VDS = 30 V.
