SQJ963EP-T1_GE3

Overview

The Vishay Siliconix SQJ963EP-T1_GE3 is an automotive-grade dual P-channel MOSFET utilizing TrenchFET technology. It features a -60 V drain-source voltage rating and supports continuous drain currents of -8 A at 25 °C and -7 A at 125 °C. The device offers low on-state resistance, typically 0.085 Ω at VGS = -10 V and 0.115 Ω at VGS = -4.5 V. Packaged in a leadless PowerPAK SO-8L Dual footprint, it operates within a junction temperature range of -55 °C to +175 °C. The component is AEC-Q101 qualified and includes 100% Rg and UIS testing.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• TrenchFET power MOSFET technology for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21
• 100% tested for gate resistance and unclamped inductive switching

Applications

• Automotive electronic control units (ECUs)
• High-side load switching applications
• Power distribution modules in vehicles

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Ensure that the intended application environment remains within the specified thermal limits and voltage ratings. Confirm availability through authorized distributors as manufacturing locations may vary. Validate all parameters for the specific use case before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring dual P-channel switching with high current capabilities in a compact surface-mount form factor. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching speeds. Verify compatibility with the target PCB layout dimensions for the PowerPAK SO-8L package.

Part Context

This part belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the PowerPAK SO-8L Dual package, which provides a compact footprint suitable for space-constrained board designs. The series is characterized by its TrenchFET technology, offering improved on-resistance and switching performance compared to standard planar technologies.

Replacement Considerations

Direct replacements must match the -60 V rating, dual P-channel configuration, and PowerPAK SO-8L Dual package. Verify that alternative components meet AEC-Q101 qualification if automotive reliability is required. Check pinout compatibility and thermal resistance values to ensure equivalent performance in the existing design.