SQJ974EP-T1_BE3

Overview

The SQJ974EP-T1_BE3 is an automotive-grade dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 100 V drain-source voltage and supports a continuous drain current of 30 A per leg at 25 °C. The device offers a maximum on-state resistance of 0.0255 Ω at VGS = 10 V and 0.0325 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it is qualified to AEC-Q101 standards and rated for junction temperatures up to 175 °C.

Feature Summary

• AEC-Q101 qualified for automotive reliability requirements
• TrenchFET power MOSFET architecture for optimized performance
• 100% tested for both RDS(on) and Unclamped Inductive Switching (UIS)
• Leadless PowerPAK SO-8L package design

Applications

• Automotive electronic control units
• High-side and low-side switching applications
• Power distribution systems in vehicles

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance with halogen-free and lead-free material categorization requirements. Ensure that the component selection aligns with the thermal management capabilities defined for the PowerPAK SO-8L package under intended operating conditions.

Selection Notes

Select this component when a dual N-channel configuration with 100 V rating is required for automotive environments. Consider the 175 °C maximum junction temperature capability and the specific on-resistance values at 10 V and 4.5 V gate drive voltages to ensure compatibility with the system's logic levels and efficiency targets.

Part Context

This part belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It shares the PowerPAK SO-8L dual package form factor with other devices in the lineup but is distinguished by its specific 100 V breakdown voltage and dual-channel topology designed for high-current automotive switching tasks.

Replacement Considerations

SQJ974EP-T1_GE3