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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 34A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：34A (Tc)
- Rds On (Max) @ Id, Vgs：40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V, 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1390pF @ 25V, 650pF @ 25V
- Power - Max：48W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual Asymmetric
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Vishay Siliconix SQJ990EP-T1_GE3 is an automotive-grade dual N-channel MOSFET utilizing TrenchFET technology. It features a 100 V drain-source voltage rating and supports junction temperatures up to 175 °C. The device employs a PowerPAK SO-8L Dual Asymmetric package with distinct channel characteristics: Channel 1 provides 17 A continuous current with a maximum on-resistance of 40 mΩ at VGS = 10 V, while Channel 2 delivers 34 A with a maximum on-resistance of 19 mΩ under the same conditions.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Dual asymmetric configuration optimized for synchronous buck applications
- TrenchFET power MOSFET architecture ensuring low conduction losses
- 100% Rg and UIS tested for enhanced quality assurance
Applications
- Automotive synchronous buck converters
- High-efficiency DC/DC power conversion modules
- Automotive electronic control units (ECUs)
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the ordering suffix corresponds to the specified tape-and-reel packaging format. Ensure compliance with RoHS directives and material categorization requirements as defined in the product datasheet before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring a single package solution with two independent N-channel outputs of differing current capacities. The asymmetric design allows for optimized footprint usage in space-constrained automotive PCB layouts. Evaluate thermal resistance ratings relative to the specific copper area available on the target printed circuit board.
Part Context
This component belongs to the Vishay Siliconix SQJ series of automotive MOSFETs. It utilizes the PowerPAK SO-8L Dual Asymmetric package, which distinguishes it from standard symmetric dual packages by providing unequal channel sizes within a single leadless footprint to maximize current density efficiency.
Replacement Considerations
Direct replacements must match the 100 V rating, PowerPAK SO-8L Dual Asymmetric package, and AEC-Q101 qualification. Verify that substitute devices offer comparable on-resistance values for both channels to maintain thermal performance in existing synchronous buck designs.
